Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D ...
PUCHON, South Korea–Fairchild Semiconductor International Inc. today announced a series of next-generation horizontal defection transistors, based on advanced bipolar technology capable of supporting ...
A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right). (Courtesy: Y Shao) A new transistor made from semiconducting vertical nanowires of ...
When I was in undergrad not so long ago, all my circuits and semiconductor textbooks/professors were talking about MOSFETs (metal-oxide semiconductor field-effect transistor) that were just “better” ...
Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of ...
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